{"product_id":"m08900-semi-m89-test-method-for-recombination-lifetime-of-the-epilayer-of-the-silicon-epitaxial-wafer-p-p-n-n-by-the-short-wavelength-excitation-microwave-photoconductive-decay-method","title":"M08900 - SEMI M89 - Test Method for Recombination Lifetime of the Epilayer of the Silicon Epitaxial Wafer (p\/p+, n\/n+) by the Short Wavelength Excitation Microwave Photoconductive Decay Method","description":"\u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eIn recent years, ULSI and other devices have been increasingly miniaturized and integrated. As a result, high-tech devices use more and more epitaxial wafers (p\/p+, n\/n+) which have substrates with lower resistivity, because epitaxial wafers are advantageous over other types of silicon wafers in several respects. For example, their features include integrity of active region of device, gettering capacity, resistance for latch up, etc. On the other hand, epitaxial wafers are feared to present serious problems in their manufacturing process, such as heavy metal contamination and defect formation in epilayers. Therefore, it is necessary to standardize the measurement method for recombination lifetime as a means of quality evaluation of epitaxial wafer contamination, and crystal defects etc.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cbr\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eThis Standard specifies the measurement method for recombination lifetime in epilayer of silicon epitaxial wafer (epitaxial wafer; p\/p+[++], n\/n+[n++]) by microwave photoconductive decay method using short wavelength excitation light source (the short wavelength excitation µ-PCD method).\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eFor evaluation of an epilayer, it is necessary to confine excess carriers in an epilayer. Therefore, samples of the epitaxial silicon wafers should have p\/p+ (++) or n\/n+ (++) structure.\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003e\u003cb\u003eReferenced SEMI Standards\u003c\/b\u003e (purchase separately)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI M1 — Specification for Polished Single Crystal Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI M59 — Terminology for Silicon Technology\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF28 — Test Method for Minority-Carrier Lifetime in Bulk Germanium and Silicon by Measurement of Photoconductive Decay\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF42 — Test Method for Conductivity Type of Extrinsic Semiconducting Materials\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF84 — Test Method for Measuring Resistivity of Silicon Wafers With an In-Line Four-Point Probe\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF391 — Test Method for Minority Carrier Diffusion Length in Extrinsic Semiconductors by Measurement of Steady-State Surface Photovoltage\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon Wafers\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current Gage\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF723 — Practice for Conversion Between Resistivity and Dopant Density for Boron-Doped, Phosphorus-Doped, and Arsenic-Doped Silicon\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF978 — Test Method for Characterizing Semiconductor Deep Levels by Transient Capacitance Techniques\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF1388 — Test Method for Generation Lifetime and Generation Velocity of Silicon Material by Capacitance-Time Measurements of Metal-Oxide-Silicon (MOS) Capacitors\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF1530 — Test Method for Flatness, Thickness, and Thickness Variation of Silicon Wafers by Automated Noncontact Scanning\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI MF1535— Test Method for Carrier Recombination Lifetime in Electronic-Grade Silicon Wafers by Non-Contact Measurement of Photoconductivity Decay by Microwave Reflectance\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003e \u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003e\u003cb\u003eRevision History\u003c\/b\u003e\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e \u003cp class=\"MsoNormal\"\u003e\u003cspan style='font-size:10.0pt;line-height:107%;font-family: \"Arial\",sans-serif'\u003eSEMI M89-0721 (first published)\u003co:p\u003e\u003c\/o:p\u003e\u003c\/span\u003e\u003c\/p\u003e","brand":"semi.org","offers":[{"title":"SEMI M89-0721 - Current","offer_id":46102074130605,"sku":"14594","price":149.6,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0751\/8493\/0989\/files\/MVolume_482357b4-8331-4b7e-8536-2412e266c607.png?v=1781140220","url":"https:\/\/norlato.com\/products\/m08900-semi-m89-test-method-for-recombination-lifetime-of-the-epilayer-of-the-silicon-epitaxial-wafer-p-p-n-n-by-the-short-wavelength-excitation-microwave-photoconductive-decay-method","provider":"norlato","version":"1.0","type":"link"}